maximum ratings & thermal characteristics rating at 25 c ambient temperature unless otherwise specified, resistive or inductive load, 60 hz. for capacitive load derate current by 20%. parameter symbol unit maximum repetitive peak reverse voltage maximum rms bridge input voltage maximum dc blocking voltage maximum average forward rectified output current at t a =100 c peak forward surge current single sine-wave superimposed on rated load (jedec method) rating for fusing ( t<8.3ms) typical thermal resistance per element (1) operating junction and storage temperature range vrrm v rms v dc i f(av) i t 2 i fsm r eja t j, t stg 50 100 200 400 800 1000 1200 600 35 70 140 280 420 560 700 840 50 100 200 400 600 800 1000 1200 175 2.2 -55 to + 150 v v v a a a 2 sec 6.0 features this series is ul listed under the recognized component index, file number e142814 the plastic material used carries underwriters laboratory flammability recognition 94v-0 ideal for p.c. board mounting high surge current capability high temperature soldering guaranteed 265 c /10 seconds at 5 lbs (2.3kg) tension 127 c / w gbu 600 gbu 601 gbu 602 gbu 604 gbu 606 gbu 608 gbu gbu 610 612 mechanical data case: molded plastic body terminals: plated leads solderable per mil-std-202, method 208 mounting position:: any weight: 3.8 grams (approx) max. instantaneous forward voltage drop vf 1.1 v max. dc reverse current at rated ta=25c ir 5.0 ua per leg at 6.0a max. dc reverse current at rated ta=125c ir 500 ua notes: thermal resistance from junction to ambient on pc board mounting 6.0amps glass passivated single phase silicon bridge gbu600~612 descriptions machamical dimensions gbu + 4.2 0.2 + 3.4 0.2 + 21.9 0.5 1.3 + 1.95 0.25 + 4.4 0.2 + 3.85 0.25 + 10.8 0.5 + 2 0.5 + 18.6 0.3 + 5.1 0.5 1.9 r. typ. (2places) + _ ~ ~ + 20.4 0.3 + 16.0 0.4 + 0.2 dimensions in millimeters(1mm =0.0394 ")
rating and characteristic curves gbu600 thru gbu612 fig. 1 derating curve for output rectified current fig. 3 typical instantaneous forward characteristics fig. 4 typical reverse characteristics fig. 5 typical junction capacitance ( ta=25 unless otherwise noted ) c o a v e r a g e f o r w a r d o u t p u t c u r r e n t , a m p e r e s i n s t a n t a n e o u s f o r w a r d c u r r e n t , a m p e r e s i n s t a n t a n e o u s r e v e r s e c u r r e n t , a m p e r e s c a p a c i t a n c e , p f instantaneous forward voltage, volts percent of rated peak reverse voltage, % reverse voltage, volts .01 0.1 1.0 10 100 0.6 0.7 0.8 0.9 1.0 1.1 .01 0.1 1.0 10 0 20 40 60 80 100 120 140 tj=25 c pulse width=300us 2% duty cycle tc=100 c ta=25 c 1.2 1.3 4.0 40 20 0 2.0 4.0 50 100 150 0 6.0 100 1 1.5 2 10 100 10 400 tj=25 c f=1.0mhz v =50mv p.p. ing 60hz resistive of inductive load case t emperature, c o fig. 2 maximum non-repetitive peak forward surge current p e a k f o r w a r d s u r g e c u r r e n t , a m p e r e s number of cycles at 60hz 100 150 200 1 10 100 50 8.3ms single half-sine-wave [jedec method] 250 6.0 amps g lass passi va ted sing le phase silicon bridg e
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